Description
Additional information
| MANUFACTURER | INRS |
|---|---|
| MODEL | IPEX |
Samples
- Sample sizes: 25 mm (1 in.)
- Temperature : ambient to 850 °C
- Pressure: 10-5 Torr to 100 Torr
Characteristics
- Laser source 1: PulseMaster 848 de GSI Lumonics (100Hz).
- Laser source 2: PulseMaster 846 de GSI Lumonics (50 Hz).
- Minimum target substrate distance 4 cm, adjustable up to 8 cm for better uniformity
- Possibility of deposition from residual pressure of gases such as O2, Ar, H2, He, or N2
- Rotating sample holder that can be used up to 600 °C
- Static sample holder that can be used up to 850 °C
- System allowing the selection of up to 4 targets and allows the deposition of multilayers without exposure to air
- System allowing the simultaneous evaporation from 2 targets and allows the deposition of composite layers
ROUTINE PROCESS
Deposition
Simple material
- Types: Au, Pt, Ir, Rh, Ni, Si, DLC, Ru…
- Thickness: from 10 nm to ~ µm (depending on film stress)
Nitride
- Types: Si3N4
- Thickness: from 10 nm to ~ µm (depending on film stress)
ROUTINE PROCESS
Deposition
Oxyde
- Types: SiO2, BST, PZT, CBN, RuO2, BiFeO3, SrRuO3, SnO2 …
- Thickness: from 10 nm to ~ µm (depending on film stress)
Alloy
- Types: Pt-Ru, Pt-Au, Ir-Rh, …
- Thickness : from 10 nm to ~ µm (depending on film stress
