Laser Ablation Deposition
Laser Ablation Deposition
Additional information
| MANUFACTURER | INRS |
|---|---|
| MODEL | IPEX |
Samples
- Sample sizes: 25 mm (1 in.)
- Temperature : ambient to 850 °C
- Pressure: 10-5 Torr to 100 Torr
Characteristics
- Laser source 1: PulseMaster 848 de GSI Lumonics (100Hz).
- Laser source 2: PulseMaster 846 de GSI Lumonics (50 Hz).
- Minimum target substrate distance 4 cm, adjustable up to 8 cm for better uniformity
- Possibility of deposition from residual pressure of gases such as O2, Ar, H2, He, or N2
- Rotating sample holder that can be used up to 600 °C
- Static sample holder that can be used up to 850 °C
- System allowing the selection of up to 4 targets and allows the deposition of multilayers without exposure to air
- System allowing the simultaneous evaporation from 2 targets and allows the deposition of composite layers
ROUTINE PROCESS
Deposition
Simple material
- Types: Au, Pt, Ir, Rh, Ni, Si, DLC, Ru…
- Thickness: from 10 nm to ~ µm (depending on film stress)
Nitride
- Types: Si3N4
- Thickness: from 10 nm to ~ µm (depending on film stress)
ROUTINE PROCESS
Deposition
Oxyde
- Types: SiO2, BST, PZT, CBN, RuO2, BiFeO3, SrRuO3, SnO2 …
- Thickness: from 10 nm to ~ µm (depending on film stress)
Alloy
- Types: Pt-Ru, Pt-Au, Ir-Rh, …
- Thickness : from 10 nm to ~ µm (depending on film stress
To use this equipment
The equipment available is accessible to the academic and industrial research community.
To learn about usage conditions and availability, please fill out the form below. After reviewing your request, we will contact you shortly to offer you the best available solution.