ebeam Lithography

Description

Additional information

Instrument unique in Canada :

• Having a field size up to 1.2 mm, a writing speed up to 50 MHz and an accelerating voltage of 100 keV.
• Photomasks sizes : 127 mm to 150 mm (5ˮ to 6ˮ); thickness: maximum 6,35 mm (1/4ˮ)
• Samples sizes : maximum 200 mm (8ˮ) with a writing area of 150 mm (6ˮ, NIST X-RAY Holder)
• Thickness: maximum 1 mm

Characteristics

• Acceleration: 20 to 100 keV
• Current: 100 pA – 100 nA
• Field Size: up to 1.2 mm
• Resolution: process-dependant (a 25 nm resolution is routine)
• Alignment precision: 5 to 35 nm according to the field size
• Writing speed: 50 MHz
• Address resolution: 20 bits
• Automatic focus adjustment during the writing process
• Intelligent stage with a 0.6 nm positioning precision

ROUTINE PROCESS

Lithography on negative resist

• Minimum feature size : 50 nm
• Resist thickness : 50 nm to 600 nm

ROUTINE PROCESS

Lithography on positive resist

• Minimum feature size : 10 nm
• Resist thickness : 50 nm to 1500 nm