Electron Beam Deposition
Electron Beam Deposition
Additional information
| MANUFACTURER | Kurt J. Lesker |
|---|---|
| MODEL | AXXIS |
Samples
- Samples size: maximum 152 mm (6 in.)
- Temperature : ambient
- Wafer uniformity : 5%
Characteristics
- Source 1: Electron gun with 4 automatically selected crucibles
- Source 2: Sputtering with a 75 mm target and an AC source
- Source 3: Ion source for pre-cleaning or enhancing evaporation
- Rotation with angle variation from 0 to 180 degrees
- In-situ control of deposited films thickness
- Pressure: about 10-6 Torr
- Sample holder cooled (~ 2 °C, no rotation)
- Non-normal incidence deposition; the sample holder can be oriented upward for sputtering, sideways for the ion source and downward for evaporation
ROUTINE PROCESS
Deposition
- Available materials : Au, Al, Ti, Cu, Cr, Pt, Pd, SiO2, …
- Thickness: from 10 nm to 1 µm (depending on film stress)
- Special characteristics : Noble metals are billed by the nn
To use this equipment
The equipment available is accessible to the academic and industrial research community.
To learn about usage conditions and availability, please fill out the form below. After reviewing your request, we will contact you shortly to offer you the best available solution.