Electron Beam Deposition

Description

Additional information

Samples

• Samples size: maximum 152 mm (6 in.)
• Temperature : ambient
• Wafer uniformity : 5%

Characteristics

• Source 1: Electron gun with 4 automatically selected crucibles
• Source 2: Sputtering with a 75 mm target and an AC source
• Source 3: Ion source for pre-cleaning or enhancing evaporation
• Rotation with angle variation from 0 to 180 degrees
• In-situ control of deposited films thickness
• Pressure: about 10^-6 Torr
• Sample holder cooled (~ 2 °C, no rotation)
• Non-normal incidence deposition; the sample holder can be oriented upward for sputtering, sideways for the ion source and downward for evaporation

ROUTINE PROCESS

Deposition

• Available materials : Au, Al, Ti, Cu, Cr, Pt, Pd, SiO₂, …
• Thickness: from 10 nm to 1 µm (depending on film stress)
• Special characteristics : Noble metals are billed by the nn