Inductively coupled plasma reactive ion etcher (icp-drie) Bosch and Cryogenic Processes

Description

Additional information

Samples

• Samples sizes : maximum 100 mm
• Dedicated to silicon etching

Temperatures and Gases

• Temperature : -150 °C to 400 °C
• Gases: SF₆, C₄F₈, O₂

ROUTINE PROCESS

Cryogenic Silicon Etch

• Mask : resist, SiO2, Cr
• Etch rate : 2.5 µm/min
• Selectivity : 75 :1 for positive resist; 150 :1 for SiO2; infinite for Cr
• Reproductibility : ±4%
• Uniformity : ±5% over 4 in
• Profile : 90° ±1°; aspect ratio : up to 30 :1

Bosch Silicon Etch

• Mask : resist, SiO2, Cr
• Etch rate : 2 µm/min
• Selectivity : 75 :1 for positive resist; 150 :1 for SiO2; infinite for Cr
• Reproductibility : ±4%
• Profile : 90° ±1°; aspect ratio : up to 30 :1