Sputtering
Sputtering
Additional information
| MANUFACTURER | Kurt J. Lesker |
|---|---|
| MODEL | CMS-18 |
Samples
- Sample size : maximum 152 mm (6 in.)
- Temperature : ambient to 850 °C
- Wafer uniformity : 5% on 152 mm
- Sample holder: rotation up to 20 rpm, polarization RF or DC
Characteristics
- Source 1 and 2: 75 mm target with AC source
- Source 3: 75 mm target with DC source
- Source 4: strong magnet-enhanced cathode for magnetic materials
- Quick loading via loadlock
- Gas feed for reactive sputtering
- Recipes completely computer programmable
- Arcing elimination via pulsed DC sputtering
- Crystal-based thickness measurement
- Pressure: ~ 10-6 Torr
ROUTINE PROCESS
Deposition via sputtering
- Materials : Al, Ag, Cr, Cu, Mg, Au, Pd, Pt, Ti, W, Al2O3, SiO2, MgO, ITO, YBA2Cu3O7
- Thickness: from 10 nm to 1 µm (depending on film stress)
To use this equipment
The equipment available is accessible to the academic and industrial research community.
To learn about usage conditions and availability, please fill out the form below. After reviewing your request, we will contact you shortly to offer you the best available solution.