Sputtering

Description

Additional information

Samples

• Sample size : maximum 152 mm (6 in.)
• Temperature : ambient to 850 °C
• Wafer uniformity : 5% on 152 mm
• Sample holder: rotation up to 20 rpm, polarization RF or DC

Characteristics

• Source 1 and 2: 75 mm target with AC source
• Source 3: 75 mm target with DC source
• Source 4: strong magnet-enhanced cathode for magnetic materials
• Quick loading via loadlock
• Gas feed for reactive sputtering
• Recipes completely computer programmable
• Arcing elimination via pulsed DC sputtering
• Crystal-based thickness measurement
• Pressure: ~ 10^-6 Torr

ROUTINE PROCESS

Deposition via sputtering

• Materials : Al, Ag, Cr, Cu, Mg, Au, Pd, Pt, Ti, W, Al₂O₃, SiO₂, MgO, ITO, YBA₂Cu₃O₇  
• Thickness: from 10 nm to 1 µm (depending on film stress)