Low Pressure Chemical Vapor Deposition (lpcvd)

Description

Additional information

Samples

• Sample sizes : 75 mm (3 in.) to 152 mm (6 in.)
• Temperature : 250 °C to 1275 °C
• Across wafer uniformity : 5% on 152 mm, 10% on 75 mm

Characteristics

• Tube 1: LPCVD with SiH₄, SiH₂Cl₂ or NH₃
• Tube 2: atmospheric tube with N₂, O₂, H₂ and Trans-LC liquid source
• Automated wafers push-in and pull-out
• Recipes stored on computer
• Internal torch for wet oxidation

ROUTINE PROCESS

Deposition

Oxide

• Thickness: from 10 nm to 10 µm
• Refractive index : 1.45 – 1.47

ROUTINE PROCESS

Deposition

Nitride

• Thickness: from 100 nm to 2 µm
• Refractive index : 1.98 – 2.30
• Stress : 60 MPa  – 1200 MPa