Inductively coupled plasma reactive ion etcher (icp-rie)

$0.00

Description

Additional information

MANUFACTURER Oxford Instruments
MODEL PlasmaLab System 100 – Modular ICP380

Samples

  • Photomasks sizes : maximum 150 mm (6ˮ); thickness: maximum 6,35 mm (1/4ˮ)
  • Samples sizes : maximum 150 mm (6ˮ); thickness: maximum 6,35 mm (1/4ˮ)

Available Temperatures and Gases

  • Temperature : -150 °C to 400 °C
  • Gases: Cl2, O2, SiCl4, CH4, He, SF6, H2, N2, Ar

Characteristics

  • High density 380 mm ICP Source (Generator of 2 MHz, 5 kW)
  • 240 mm lower electrode (13.56 MHz, 600 W) with automatic impedance tuning and variable height
  • Typical operating pressure: 1 – 100 mTorr
  • Fast loading via loadlock
  • Etch end point detection system by laser interferometry
  • Automated chamber cleaning
  • Cryogenic platform

 

ROUTINE PROCESS

Etch

Metal Etch

  • Types of metal: Cr, Al
  • Minimum feature size: 30 nm
  • Etch masks: SiO2 or resist
  • Etch rate: about 50 nm/min

 

ROUTINE PROCESS

Etch

III-V Material Etch

  • Type of material: GaAs, GaN, InGaN
  • Minimum feature size: 50 nm
  • Etch masks: SiO2 or resist
  • Etch rate: about 350-700 nm/min

Additional information

MANUFACTURER

Oxford Instruments

MODEL

PlasmaLab System 100 – Modular ICP380