Inductively coupled plasma reactive ion etcher (icp-rie)
Inductively coupled plasma reactive ion etcher (icp-rie)
Additional information
| MANUFACTURER | Oxford Instruments |
|---|---|
| MODEL | PlasmaLab System 100 – Modular ICP380 |
Samples
- Photomasks sizes : maximum 150 mm (6ˮ); thickness: maximum 6,35 mm (1/4ˮ)
- Samples sizes : maximum 150 mm (6ˮ); thickness: maximum 6,35 mm (1/4ˮ)
Available Temperatures and Gases
- Temperature : -150 °C to 400 °C
- Gases: Cl2, O2, SiCl4, CH4, He, SF6, H2, N2, Ar
Characteristics
- High density 380 mm ICP Source (Generator of 2 MHz, 5 kW)
- 240 mm lower electrode (13.56 MHz, 600 W) with automatic impedance tuning and variable height
- Typical operating pressure: 1 – 100 mTorr
- Fast loading via loadlock
- Etch end point detection system by laser interferometry
- Automated chamber cleaning
- Cryogenic platform
ROUTINE PROCESS
Etch
Metal Etch
- Types of metal: Cr, Al
- Minimum feature size: 30 nm
- Etch masks: SiO2 or resist
- Etch rate: about 50 nm/min
ROUTINE PROCESS
Etch
III-V Material Etch
- Type of material: GaAs, GaN, InGaN
- Minimum feature size: 50 nm
- Etch masks: SiO2 or resist
- Etch rate: about 350-700 nm/min
To use this equipment
The equipment available is accessible to the academic and industrial research community.
To learn about usage conditions and availability, please fill out the form below. After reviewing your request, we will contact you shortly to offer you the best available solution.