Description
Additional information
| MANUFACTURER | PVD |
|---|---|
| MODEL | 3000 |
Samples
- Sample sizes: from 10 mm to 75 mm (3 in.)
- Temperature: ambient to 950 °C
- Pressure: 10-8 Torr to 500 mTorr
- Wafer Uniformity: 5%
Characteristics
- Totally automated system
- Laser source: PulseMaster 866 from Light Machinery (from 500 mJ and up to 100 Hz)
- Available gases: O2, Ar, He and N2
- Target to substrate distance adjustable from 65 to 130 mm
- Automated raster scan system allowing homogeneous depositions over an area up to 3 in.
- Graphical User Interface with automated tools control and optional saving of process recipes
- Load lock allowing samples entry and exit without re-exposing the ablation chamber to air
- Carousel system allowing to use up to 3 different targets for multilayer deposition without re-exposure to air
ROUTINE PROCESS
Deposition
Simple materials
- Al, Pt…
- Thickness : from 10 nm to ~µm (depending on film stress)
Oxydes
- BST, CBN…
- Thickness : from 10 nm to ~µm (depending on film stress)
