Description
Additional information
MANUFACTURER | Tystar |
---|---|
MODEL | Tystar |
Samples
- Sample sizes : 75 mm (3 in.) to 152 mm (6 in.)
- Temperature : 250 °C to 1275 °C
- Across wafer uniformity : 5% on 152 mm, 10% on 75 mm
Characteristics
- Tube 1: LPCVD with SiH4, SiH2Cl2 or NH3
- Tube 2: atmospheric tube with N2, O2, H2 and Trans-LC liquid source
- Automated wafers push-in and pull-out
- Recipes stored on computer
- Internal torch for wet oxidation
ROUTINE PROCESS
Deposition
Oxide
- Thickness: from 10 nm to 10 µm
- Refractive index : 1.45 – 1.47
ROUTINE PROCESS
Deposition
Nitride
- Thickness: from 100 nm to 2 µm
- Refractive index : 1.98 – 2.30
- Stress : 60 MPa – 1200 MPa