+EFFICIENT +SMALL +INTEGRATED
Memory cards and other USB keys are an integral part of our daily lives. Professor Drouin’s approach could revolutionize their design.
Arrays of holes infinitely small in a layer of silicon nitride were obtained by combining e-beam lithography and plasma etching. Next, a short pulse of electrochemical current allows the formation of one silicon nanocrystal per hole. This results in a high-quality crystal array with a reproducible morphology, making it addressable in a real storage system.
REFERENCE
[1] A. Ayari-Kanoun, A. Jaouad, A. Souifi, D. Drouin, J. Beauvais, Journal of Vacuum Science & Technology B, 29 (5), 051802 (2011)
RESEARCHERS
Pr. D. Drouin and Pr. J. Beauvais (Université de Sherbrooke), Pr. A Souifi (INSA Lyon)