Ion Implantation (IMC-200)
Ion Implantation (IMC-200)
Additional information
| MANUFACTURER | Ion Beam Services |
|---|---|
| MODEL | IMC-200 |
Samples
- Samples size : from 5 mm to 150 mm
- Temperature : -150 °C to 500 °C
- Accelerating voltage: 1 keV to 200 keV (400 keV for double charge)
Characteristics
- Implanter Varian CF3000 modified
- Medium current (up to 1 mA depending on species)
- Source: gas, solids, liquids (Bernas or Freeman)
- Angle: 0 to 60 degrees (limit: 100 mm sample)
- Cassette to cassette system with 100 mm wafers
- Flood gun to neutralize charges
ROUTINE PROCESS
Ion Implantation
- Material implanted : Ar, N, B, Br, Ca, Co, Sn, F, Ge, H, Mg, Ni, Si
- Dose : 1.00+14 to 3.00+17
To use this equipment
The equipment available is accessible to the academic and industrial research community.
To learn about usage conditions and availability, please fill out the form below. After reviewing your request, we will contact you shortly to offer you the best available solution.