Low Pressure Chemical Vapor Deposition (lpcvd)
Low Pressure Chemical Vapor Deposition (lpcvd)
Additional information
| MANUFACTURER | Tystar |
|---|---|
| MODEL | Tystar |
Samples
- Sample sizes : 75 mm (3 in.) to 152 mm (6 in.)
- Temperature : 250 °C to 1275 °C
- Across wafer uniformity : 5% on 152 mm, 10% on 75 mm
Characteristics
- Tube 1: LPCVD with SiH4, SiH2Cl2 or NH3
- Tube 2: atmospheric tube with N2, O2, H2 and Trans-LC liquid source
- Automated wafers push-in and pull-out
- Recipes stored on computer
- Internal torch for wet oxidation
ROUTINE PROCESS
Deposition
Oxide
- Thickness: from 10 nm to 10 µm
- Refractive index : 1.45 – 1.47
ROUTINE PROCESS
Deposition
Nitride
- Thickness: from 100 nm to 2 µm
- Refractive index : 1.98 – 2.30
- Stress : 60 MPa – 1200 MPa
To use this equipment
The equipment available is accessible to the academic and industrial research community.
To learn about usage conditions and availability, please fill out the form below. After reviewing your request, we will contact you shortly to offer you the best available solution.