Low pressure chemical vapour deposition / TEOS
Low pressure chemical vapour deposition / TEOS
| MANUFACTURER | SPT- Micro |
|---|---|
| MODEL | AVP-8200 |
General description:
Vertical furnace for low pressure chemical vapour deposition of TEOS thin film
Characteristics :
- Film thickness: 300 ± 30 nm, and 2000 ± 200 nm
- Within wafer thickness non-uniformity: 2.5% (1 sigma)
- Wafer-to-wafer thickness non-uniformity: 2.2% (1-sigma)
- Wafer size: 150 mm, 200 mm
- Production wafers per load: 100
- Thickness range of wafers: 300 – 1700 µm
- TEOS deposition rate: 6 nm/min
- Chamber configuration : Cross-flow
- Gases used: TEOS, Oxygen
- TEOS mass flow control: ±0.1 sccm of the target flow-rate.
- Automated in-situ cleaning capability using nitrogen trifluoride
To use this equipment
The equipment available is accessible to the academic and industrial research community.
To learn about usage conditions and availability, please fill out the form below. After reviewing your request, we will contact you shortly to offer you the best available solution.