Silicon etch
Silicon etch
| MANUFACTURER | SPTS |
|---|---|
| MODEL | Versalis FxP – Rapier module |
General description:
Silicon Dry etch
Characteristics :
SI DRIE module
- Patented dual plasma source with indepemdently controlled primary and secondary decoupled plasma zones
- Excellent uniformity
- Material: Si
- Aspect Ratio: Up to 40:1
- Etch rate: Up to 8µm/min
- Profile angle: From 88° to 92° ± 0.1°
To use this equipment
The equipment available is accessible to the academic and industrial research community.
To learn about usage conditions and availability, please fill out the form below. After reviewing your request, we will contact you shortly to offer you the best available solution.