Plasma enhanced chemical vapour deposition
Plasma enhanced chemical vapour deposition
| MANUFACTURER | SPTS |
|---|---|
| MODEL | Versalis FxP APM200 |
General description:
Plasma-enhanced Chemical Vapour Deposition of amorphous Silicon, Silicon Nitride, Tetraethylorthosilicate (TEOS)
Characteristics :
- Wafer size: 200 mm
- Thickness range of wafers: 300 – 1200 µm
- Temperature range: 100 – 400 °C
- Pressure range: 0.1 – 10 Torr
- Gases used: O2, N2, SiH4, NH3, He, Ar, TEOS, C3F8
- Wafer material: Silicon, Glass, Bonded wafers
- Processes:
- 0.5 -1 µm thick film of Silicon Nitride deposited at 300 °C
- 1 – 2.5 µm thick film of TEOS deposited at 300 °C
- 0.5 -1 µm thick film amorphous Silicon deposited at 300 °C
To use this equipment
The equipment available is accessible to the academic and industrial research community.
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