Dry etching / Release Etch
Dry etching / Release Etch
| MANUFACTURER | SPTS |
|---|---|
| MODEL | Multi-station tools equipped with: Primaxx Monarch 25 | Xactix CVE | Heat module |
General description:
Anhydrous VHF etch of sacrificial oxide in Monarch 25 module and XeF2 etch of a sacrificial silicon
Characteristics :
Primaxx fxP
(VHF)
- Batch processing module (up to 25 200 mm wafers)
- Oxide etch rates: 0.1 à 10 um/min
- Oxide etch uniformity within wafer: ≤ 7%
- Oxide etch repeatability: ≤ 4%
- Selectivity to silicon > 10 000 : 1
- Process with high selectivity to silicon nitride is available
Xactix CVE
(XeF2)
- Single wafer processing module.
- Silicon etch rate : 0.1 à 10 um/min
- Silicon etch uniformity within wafer:: ≤12%
- Silicon etch repeatability: ≤ 5%
- Selectivity to oxide > 10 000 : 1
- Process with high selectivity to silicon nitride is available
To use this equipment
The equipment available is accessible to the academic and industrial research community.
To learn about usage conditions and availability, please fill out the form below. After reviewing your request, we will contact you shortly to offer you the best available solution.