Thermal treatment / Anneal
Thermal treatment / Anneal
| MANUFACTURER | SPT Micro |
|---|---|
| MODEL | AVP-9200 |
General description:
Vertical furnace for wet/dry silicon oxide thin film growth, and hydrogen anneal
Characteristics :
- Thermal oxide thickness: 140 ± 6 nm, and 900 ± 20 nm
- Within wafer thickness non-uniformity: 0.5% (1 sigma)
- Wafer-to-wafer thickness non-uniformity: 0.4% (1-sigma)
- Wafer size: 150 mm, 200 mm
- Production wafers per load: 100
- Thickness range of wafers: 300 – 1700 µm
- Temperature range: 950°C – 1150 °C
- Chamber configuration : Cross-flow
- Gases used: Oxygen, Hydrogen, Nitrogen, TransLC
- Mass flow control: ±5 sccm of the target gas flow
- Annealing environment: Hydrogen/Oxygen
- Wafer material: Silicon, Silicon-on-Insulator(SOI)
To use this equipment
The equipment available is accessible to the academic and industrial research community.
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