Laser Ablation Deposition
Laser Ablation Deposition
Additional information
| MANUFACTURER | PVD |
|---|---|
| MODEL | 3000 |
Samples
- Sample sizes: from 10 mm to 75 mm (3 in.)
- Temperature: ambient to 950 °C
- Pressure: 10-8 Torr to 500 mTorr
- Wafer Uniformity: 5%
Characteristics
- Totally automated system
- Laser source: PulseMaster 866 from Light Machinery (from 500 mJ and up to 100 Hz)
- Available gases: O2, Ar, He and N2
- Target to substrate distance adjustable from 65 to 130 mm
- Automated raster scan system allowing homogeneous depositions over an area up to 3 in.
- Graphical User Interface with automated tools control and optional saving of process recipes
- Load lock allowing samples entry and exit without re-exposing the ablation chamber to air
- Carousel system allowing to use up to 3 different targets for multilayer deposition without re-exposure to air
ROUTINE PROCESS
Deposition
Simple materials
- Al, Pt…
- Thickness : from 10 nm to ~µm (depending on film stress)
Oxydes
- BST, CBN…
- Thickness : from 10 nm to ~µm (depending on film stress)
To use this equipment
The equipment available is accessible to the academic and industrial research community.
To learn about usage conditions and availability, please fill out the form below. After reviewing your request, we will contact you shortly to offer you the best available solution.