Magnetron Sputtering

Description

Additional information

Samples

• Sample size : 1 mm to 100 mm (4 in.)
• Wafer uniformity : 13% on 100 mm (4 in.

Characteristics

• Pressure  : up to 1×10^-6 Torr
• Pass through for sample transfer
• Target types : 50 mm (2 in.) diameter, 99.9% purity
• Substrate types allowed: semiconductors, metal and plastics
• Gas: Ar, N₂, O₂
• Deposition rate: 1 to 10 Å/s

ROUTINE PROCESS

Silicon Deposition

• Thickness: from 10 nm to 2000 nm

Metal Deposition

• Type: Au, Cr, Ni
• Thickness: from 10 nm to 2000 nm

ROUTINE PROCESS

Oxide Deposition

• Type: ITO, silicon dioxide
• Thickness: from 10 nm to 20000 nm

Nitride Deposition

• Type of nitride: silicon nitride
• Thickness: from 10 nm to 2000 nm