Plasma Enhanced Chemical Vapor Deposition (PECVD)

Description

Additional information

Samples

• Samples size: maximum 152,4 mm (6ˮ)
• Wafer uniformity: less than ± 5 %

Temperatures and Gases

• Temperature : ambient to 400 °C
• Gases : SiH₄, N₂, NH₃, N₂O, CF₄, Ar, O₂
• Pressure: 1 to 1500 mTorr

Characteristics

• Parallel plate configuration electrodes operating at 13.56 MHz
• 240 mm electrodes with automatic impedance tuning
• Shower head gas inlet optimized for PECVD Deposition
• Operating power: up to 600 W
• Electrodes gap is variable and controlled by the lower Electrode position
• “Frequency Mix” mode (500 W, 50 kHz-460 kHz on lower electrode) for stress control of the deposited films
• Fast loading via loadlock
• Chamber cleaning controlled via optical spectroscopy

ROUTINE PROCESS

Silicon Deposition

•  Type of silicon: a-Si
• Thickness: minimum ~ 100 nm
• Deposition rate: ~ 25 nm/min
• Deposition temperature: >200 °C
• Mechanical stress: Low compressive (< 300 MPa)    

ROUTINE PROCESS

Oxide Deposition

• Type of oxide: SiOx
• Thickness: ~ 50 nm to less than 10 µm
• Deposition rate: ~ 60 nm/min
• Deposition temperature: 400 °C
• Mechanical stress: ~ 50 MPa
• Refractive index : 1.47 < ƞ < 1.55

SiC Deposition

• Type of SiC : SixC1-x  (x ~ 0.5)
• Thickness : ~ 50 nm to more than X µm
• Deposition rate : ~ 50 nm/min
• Deposition temperature : 400 °C
• Mechanical stress: Compressive (100 MPa)

ROUTINE PROCESS

Nitride Deposition

• Type of nitride: SiNx
• Thickness: ~ 100 nm to less than 10 µm
• Deposition rate: > 10 nm/min
• Deposition temperature: 300 °C
• Mechanical stress: Low (~ 100 MPa)
• Refractive index : 1.99

Diamond-Like Carbon (DLC)

• Thickness: ~ 10 to 100 nm
• Deposition rate : ~ 10 nm/min
• Deposition temperature : ambient
• Mechanical stress: Compressive (> GPa)
• Mechanical hardness: 15 GPa