Scanning electron microscope – focused ion beam (SEM-FIB)

Description

Additional information

Description

• Focused Ion Beam (FIB) integrated with a Scanning electronic microscopy (SEM) for TEM sample preparation
• Gas Injection System (GIS) to deposit and etch (5-GIS de Orsayphysics) equipped with 5 precursors
• Nanomanipulateur OmniProbe 200 d’Oxford Instrument
• Characterization by energy dispersive spectroscopy (EDS) (Quantax from Bruker, X-Flash 6160 detector)

Applications

• Nanometric scale sample observation (SEM) via secondary (SE) or backscattered (BSE) electron emission
• X-ray elemental analysis (EDS)
• Nanometric scale etching (FIB)
• Multilayer coatings cross section analysis (FIB-SEM)

Technical specifications

• Electron optics
  • Electron gun: – High-brightness Schottky source, acceleration voltage 0.2-30kV
  • Probe current : 2pA – 200nA
  • Resolution: SE mode, 1.2 nm at 30 kV and 3.0 nm at 3 kV. BSE mode, 2.0 nm at 30kV
  • Magnification : 1X – 1,000,000X

• Ion gun : liquid Galium
  • Resolution : < 5 nm at 30 kV / < 2.5 nm at 30 kV (at the MEB-FIB coincidence point)
  • Magnification : 150X – 1,000,000X
  • SEM-FIB angle : 55^o
  • Acceleration voltage : 0.5kV – 30 kV