Low pressure chemical vapour deposition / LSN
Low pressure chemical vapour deposition / LSN
| MANUFACTURER | SPT |
|---|---|
| MODEL | AVP-8200 |
General description:
Low Pressure Chemical Vapour Deposition of LSN thin film
Characteristics :
- Film thickness: 135 ± 6.7 nm, and 300 ± 45 nm
- Within wafer thickness non-uniformity: 1 % (1 sigma)
- Wafer-to-wafer thickness non-uniformity: 1 % (1-sigma)
- Wafer size: 150 mm, 200 mm
- Production wafers per load: 50 – 100
- Thickness range of wafers: 300 – 1700 µm
- LSN deposition rate: 1.5 nm/min
- Temperature range: 600 – 800 °C
- Chamber configuration : Cross-flow
- Gases used: Dichlorosilane, Ammonia
- Dichlorosilane mass flow control: ±0.1 sccm of the target flow-rate.
- Ammonia mass flow control: ±0.1 sccm of the target flow-rate.
- Automated in-situ cleaning capability using nitrogen trifluoride
To use this equipment
The equipment available is accessible to the academic and industrial research community.
To learn about usage conditions and availability, please fill out the form below. After reviewing your request, we will contact you shortly to offer you the best available solution.